unisonic technologies co., ltd 5n50k-mt power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r502-b22.c 5a, 500v n-channel power mosfet ? description the utc 5n50k-mt is an n-channel power mosfet adopting utc?s advanced technology to provide customers with dmos, planar stripe technology. this technology is designed to meet the requirem ents of the minimum on-state resistance and perfect switching performance. it also can withstand high energy pulse in the avalanche and communication mode. the utc 5n50k-mt can be used in applications, such as active power factor correction, high efficiency switched mode power supplies, electronic lamp ballasts based on half bridge topology. ? features * r ds(on) < 1.4 ? @ v gs =10v, i d =2.5a * 100% avalanche tested * high switching speed ? symbol
5n50k-mt preliminary power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-b22.c ? ordering information ordering number pin assignment lead free halogen free package 1 2 3 packing 5n50kl-ta3-t 5n50kg-ta3-t to-220 g d s tube 5n50kl-tf3-t 5n50kg-tf3-t to-220f g d s tube 5n50kl-tf1-t 5n50kg-tf1-t to-220f1 g d s tube 5n50kl-tf2-t 5n50kg-tf2-t to-220f2 g d s tube 5n50kl-tf3-t 5n50kg-tf3-t to-220f3 g d s tube 5n50kl-tm3-t 5n50kg-tm3-t to-251 g d s tube 5n50kl-tms-t 5n50kg-tms-t to-251s g d s tube 5n50kl-tms2-t 5N50KG-TMS2-T to-251s2 g d s tube 5n50kl-tms4-t 5n50kg-tms4-t to-251s4 g d s tube 5n50kl-tn3-r 5n50kg-tn3-r to-252 g d s tape reel 5n50kl-tnd-r 5n50kg-tnd-r to-252d g d s tape reel note: pin assignment: g: gate d: drain s: source ? marking
5n50k-mt preliminary power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-b22.c ? absolute maximum ratings (t c =25c, unless otherwise specified) parameter symbol ratings unit drain-source voltage v dss 500 v gate-source voltage v gss 30 v continuous i d 5 a drain current pulsed (note 2) i dm 20 a avalanche current (note 2) i ar 5 a single pulsed (note 3) e as 150 mj avalanche energy repetitive (note 2) e ar 7.3 mj peak diode recovery dv/dt (note 4) dv/dt 4.5 v/ns to-220 78 w to-220f/to-220f1 to-220f3 36 w to-220f2 29 w power dissipation to-251/to-251s to-251s2/to-251s4 to-252/to-252d p d 54 w junction temperature t j +150 c storage temperature t stg -55~+150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating: pulse width limit ed by maximum junction temperature 3. l = 12mh, i as = 5a, v dd = 50v, r g = 25 ? , starting t j = 25c 4. i sd 5a, di/dt 200a/s, v dd bv dss , starting t j = 25c ? thermal data parameter symbol ratings unit to-220/to-220f to-220f1/to-220f2 to-220f3 62.5 c/w junction to ambient to-251/to-251s to-251s2/to-251s4 to-252/to-252d ja 110 c/w to-220 1.16 c/w to-220f/to-220f1 to-220f3 4.2 c/w to-220f2 4.18 c/w junction to case to-251/to-251s to-251s2/to-251s4 to-252/to-252d jc 2.3 c/w
5n50k-mt power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-b22.c ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss i d =250a, v gs =0v 500 v breakdown voltage temperature coefficient bv dss / t j reference to 25c, i d =250a 0.5 v/c v ds =500v, v gs =0v 1 drain-source leakage current i dss v ds =400v, t c =125c 10 a forward v gs =30v, v ds =0v 100 na gate- source leakage current reverse i gss v gs =-30v, v ds =0v -100 na on characteristics gate threshold voltage v gs(th) v ds =v gs , i d =250a 2.0 4.0 v static drain-source on-state resistance r ds(on) v gs =10v, i d =2.5a 1.23 1.4 ? dynamic parameters input capacitance c iss 525 625 pf output capacitance c oss 64 105 pf reverse transfer capacitance c rss v gs =0v, v ds =25v, f=1.0mhz 6 20 pf switching parameters turn-on delay time t d(on) 46 60 ns rise time t r 50 70 ns turn-off delay time t d(off) 54 130 ns fall-time t f v dd =30v, i d =0.5a, r g =25 ? (note 1, 2) 44 105 ns total gate charge q g 21.6 24 nc gate to source charge q gs 5.6 nc gate to drain charge q gd v gs =10v, v ds =50v, i d =1.3a (note 1, 2) 5.5 nc source- drain diode ratings and characteristics maximum continuous drain-source diode forward current i s 5 a maximum pulsed drain-source diode forward current i sm 20 a drain-source diode forward voltage v sd i s =5a, v gs =0v 1.4 v reverse recovery time t rr 263 ns reverse recovery charge q rr i s =5a, v gs =0v, di f /dt=100a/s (note 1) 1.9 c notes: 1. pulse test: pulse width 300s, duty cycle 2% 2. essentially independent of operating temperature.
5n50k-mt power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-b22.c ? test circuits and waveforms 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms resistive switching test circui t resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
5n50k-mt power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-b22.c ? test circuits and waveforms(cont.) v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd same type as dut i sd v gs l driver peak diode recovery dv/dt test circuit & waveforms v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current
5n50k-mt power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-b22.c ? typical characteristics drain current vs. drain-source breakdown voltage drain current, i d (a) drain-source breakdown voltage, bv dss (v) 1 0 drain current vs. gate threshold voltage drain current, i d (a) gate threshold voltage, v th (v) 3 4 2 0 50 100 150 200 250 300 0 100 300 500 600 200 0 50 100 150 200 250 300 400 5 drain current, i d (a) coutinuous drain-soarce current, i s (a) utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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